The 75N65FL2 is a high-performance Field-Stop Trench IGBT designed to meet demanding power switching applications. It offers a robust construction with low on-state voltage and minimal switching loss, making it highly efficient. With a collector-emitter voltage of 650V and a collector current rating of up to 75A at 100°C, it is ideal for high-speed switching in applications such as solar inverters, uninterruptible power supplies (UPS), and welding machines. The device also features a soft fast reverse recovery diode and 5 μs short-circuit capability.

Key Features :
Insulated Gate Bipolar Transistor (IGBT)
Gate-Emitter Voltage (VGE): ±20V
Collector Current (IC): 75A @ 100°C, 100A @ 25°C
Collector-Emitter Voltage (VCE): 650V
Package Type: TO-247-3
Power Dissipation: 595W @ 25°C